Impact of Spin Fluctuation on the magnetic properties of Magnetic Tunnel Junction-Based Molecular Spintronic Device (MTJMSD)

Marzieh Savadkoohi, Bishnu R. Dahal, Eva Mutungo, Andrew Grizzle, Christophe D'Angelo, P. Tyagi
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Abstract

Striking advancement of science over the last few decades has doubled the need of having faster and more efficient electronic devices. Magnetic tunnel junction-based molecular spintronic devices (MTJMSDs) are potential platforms for futuristic computers and may significantly reduce power consumption and enhance processing speed [1], [2]. Using transport properties of electrons, MTJMSD creates conductive molecular channels between two FM electrodes (FMEs). In our previous work, we investigated the effect of several factors on MTJMSDs' magnetic properties through Monte Carlo Simulation (MCS). Our results showed that i) Molecule-FMEs' coupling strength and nature ii) FMEs' length and thickness and iii) thermal energy have determinative effect on MTJMSD magnetic behavior [3]. For our initial comprehension, we constrained our earlier studies to just electrons' transport properties via molecular channels. In this research we took one step further towards realization of MTJMSD magnetic properties and investigated the effect of spin fluctuation (SF) as well. Here, we report the result of an extreme case where molecules made a strong antiFM coupling with one electrode and a strong FM coupling with another one at room temperature (KT=0.1 of the Curie temperature) for a fixed device size. Our preliminary results show that MTJMSD's need more iteration counts to attain equilibrium state in the presence of SFs. According to our MCS results, 16 molecules can induce antiFM coupling between FMEs in both with and without SF cases. However, the spatial orientation of M is noisier in the presence of SF despite doing 500 million simulation counts. The correlation results agree with spatial orientation of electrodes and molecules' magnetic moment. Based on our observation, there is a strong negative/antiferromagnetic correlation between FMEs when there is no SF. However, there are multiple pockets of average to high negative correlation between FMEs and molecules while applying SF effect. To complement our study and gain a better understanding of the role of SF on MTJMSD's magnetic properties, we will also investigate time evolution of energy, magnetic susceptibility and coupling energy required for transition from low to high magnetization.
自旋涨落对磁隧道结分子自旋电子器件(MTJMSD)磁性能的影响
在过去的几十年里,科学的惊人进步使人们对更快、更高效的电子设备的需求增加了一倍。基于磁隧道结的分子自旋电子器件(MTJMSDs)是未来计算机的潜在平台,可以显著降低功耗并提高处理速度[1],[2]。利用电子的输运特性,MTJMSD在两个调频电极(FMEs)之间创建导电分子通道。在我们之前的工作中,我们通过蒙特卡罗模拟(MCS)研究了几个因素对MTJMSDs磁性能的影响。我们的研究结果表明,i)分子-FMEs的耦合强度和性质ii) FMEs的长度和厚度以及iii)热能对MTJMSD的磁性行为具有决定性影响[3]。为了我们最初的理解,我们将早期的研究局限于电子通过分子通道的传输性质。在本研究中,我们进一步研究了MTJMSD的磁性能,并研究了自旋涨落(SF)对MTJMSD磁性能的影响。在这里,我们报告了一个极端情况下的结果,在室温(KT=居里温度的0.1)下,分子与一个电极进行了强反调频耦合,并与另一个电极进行了强调频耦合。我们的初步结果表明,MTJMSD需要更多的迭代次数才能达到平衡状态。根据我们的MCS结果,16个分子在有和没有SF的情况下都可以诱导FMEs之间的反fm耦合。然而,尽管进行了5亿次模拟计数,但在SF存在的情况下,M的空间方向噪声更大。相关结果与电极的空间取向和分子的磁矩一致。根据我们的观察,当没有SF时,fme之间存在很强的负/反铁磁相关性。然而,在应用SF效应时,FMEs与分子之间存在多个平均到高度负相关的口袋。为了补充我们的研究并更好地理解SF对MTJMSD磁性能的作用,我们还将研究从低磁化到高磁化转变所需的能量、磁化率和耦合能的时间演变。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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