Toward fully monolithic 1550-nm lasers on silicon by direct hetero-epitaxy growth on patterned substrates

Abstract

We demonstrate diode rectifying behavior of 1550-nm laser structures on exact-oriented (001) silicon substrates after coalescence of densely-packed, smooth, highly crystalline, and millimeter-long indium phosphide nanowires grown by MOCVD using aspect-ratio-trapping and selective area growth.