{"title":"An inductor-less fractional-N injection-locked PLL with a spur-and-phase-noise filtering technique","authors":"A. Li, Y. Chao, Xuan Chen, Liang Wu, H. Luong","doi":"10.1109/VLSIC.2016.7573547","DOIUrl":null,"url":null,"abstract":"Utilizing a novel phase-averaging filtering technique capable of wide-band spur-and-phase-noise suppression of up to 20dB, a 1.2-GHz inductor-less fractional-N injection-locked PLL achieves phase noise as low as -146dBc/Hz at 30MHz offset with 2MHz resolution allowing for inductor-less alternatives to LC-based PLLs in wireless applications. The 65nm CMOS prototype improves 10-MHz phase noise from -115 to -135dBc/Hz, injection spurs from -40.5dB to -57dB, and integrated jitter from 3.57ps to 1.48ps while occupying an area of 0.6mm2 and consuming 19.8mW from a 0.85V supply resulting in FoM and FoMJitter of -163dB and -223.6dB respectively.","PeriodicalId":6512,"journal":{"name":"2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)","volume":"40 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2016.7573547","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
Utilizing a novel phase-averaging filtering technique capable of wide-band spur-and-phase-noise suppression of up to 20dB, a 1.2-GHz inductor-less fractional-N injection-locked PLL achieves phase noise as low as -146dBc/Hz at 30MHz offset with 2MHz resolution allowing for inductor-less alternatives to LC-based PLLs in wireless applications. The 65nm CMOS prototype improves 10-MHz phase noise from -115 to -135dBc/Hz, injection spurs from -40.5dB to -57dB, and integrated jitter from 3.57ps to 1.48ps while occupying an area of 0.6mm2 and consuming 19.8mW from a 0.85V supply resulting in FoM and FoMJitter of -163dB and -223.6dB respectively.