Effect of Nanostructure CdSe/CdS Dot-in-Rods Coated on Flexible Cellulosic Substrate to Improve Photoluminescence Potential of Conducting Fiber

Sensor Letters Pub Date : 2020-03-01 DOI:10.1166/sl.2020.4209

S. Patra, B. Mallick

引用次数: 2

Abstract

The work presented here, the flash synthesis of high photoluminescence of CdSe/CdS Dot-in-Rods was carried out by "high-temperature short-time" (HTST) processing technique of quantum yield being 77%. Upon characterization by transmission electron microscope (TEM), it is found to be the dimensions of CdSe-CdS QDs to be rods (rod length rod diameter) of 27.8 × 3.4 nm. A layer of high luminescence CdSe/CdS Dot-in-Rods was grown on the surface of the touch sensitive natural Mimosa pudica (MP) natural conducting fiber by chemical dipping method. The composite CdSe/CdS are made up of a CdSe spherical core (Dot) of average diameter about 2.9 nm embedded in a Rod of CdS shell. The well-oriented CdSe/CdS Dot-in-Rods nano-particle was observed to have an emission peak at 545 nm. The works suggest a sensing plate which enhances Photoluminescence potential of conducting natural fiber.

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柔性纤维素基上包覆纳米结构CdSe/CdS点棒对提高导电纤维光致发光电位的影响

本文采用量子产率为77%的“高温短时间”(HTST)加工技术，实现了高光致发光CdSe/CdS点棒的闪蒸合成。通过透射电镜(TEM)表征，发现CdSe-CdS量子点的尺寸为27.8 × 3.4 nm的棒状(棒状长度、棒状直径)。采用化学浸渍法在触敏天然含羞草(Mimosa pudica, MP)天然导电纤维表面生长了一层高发光CdSe/CdS点插入棒。CdSe/CdS复合材料是由一个平均直径约2.9 nm的CdSe球形核(Dot)嵌入在CdS外壳的棒状结构中。取向良好的CdSe/CdS点状棒纳米粒子在545 nm处有一个发射峰。提出了一种提高导电天然纤维光致发光电位的传感板。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Sensor Letters 工程技术-电化学

自引率

0.00%

发文量

审稿时长

6 months

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