Copper Electrodeposition by Hydrogen Evolution Assisted Electroplating (HEA) for Wearable Electronics

Sabrina M. Rosa-Ortiz, A. Takshi
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引用次数: 6

Abstract

A novel technique called hydrogen evolution assisted (HEA) electroplating, has dramatically shown enhancement to the deposition rate of copper compared to galvanostatic conventional electroplating methods, opening new venues for the direct integration of devices to fabrics leading to the development of useful wearable electronics. HEA can be used for both printing copper tracks on a multi-wall carbon nanotubes (MWCNTs) coated template tracks and soldering surface mount electronic devices (SMD) to such tracks, demonstrating its versatility to be used for specific applications in which fabric mutilation wants to be prevented. However, in this project we studied how copper deposition takes place at different voltage ranges using 1000 Denier Coated Cordura Nylon, Laminated Polyester Ripstop and 100% Virgin Vinyl in the constant presence of the hydrogen evolution technique. Cupric sulfate (CUSO4) and sulfuric acid (H2SO4) were used as the medium to allow a lateral deposition over a multi-wall carbon nanotube track of 0.1mm by the application of a voltage ranging between - 0.5V to −2.0V using a potentiostat to employ the cyclic voltammeter technique in order to achieve a uniform deposition. Structure of the fabrics and variation of the copper deposits with respect to the type of fabric used were observed using a scanning electron microscopy (SEM).
可穿戴电子产品的析氢辅助电镀(HEA)铜电沉积
一种称为氢析辅助(HEA)电镀的新技术,与恒流传统电镀方法相比,显着提高了铜的沉积速率,为设备与织物的直接集成开辟了新的场所,从而导致了有用的可穿戴电子产品的发展。HEA既可用于在多壁碳纳米管(MWCNTs)涂层的模板轨道上打印铜轨道,也可用于将表面贴装电子器件(SMD)焊接到这些轨道上,这证明了它的多功能性,可用于防止织物损坏的特定应用。然而,在这个项目中,我们研究了在不同的电压范围内,使用1000旦涂层科都拉尼龙、层压聚酯防撕裂剂和100%纯乙烯基,在持续存在的析氢技术下,铜沉积是如何发生的。以硫酸铜(CUSO4)和硫酸(H2SO4)为介质,在0.1mm的多壁碳纳米管轨道上通过- 0.5V至- 2.0V的电压应用恒电位器和循环伏安计技术进行横向沉积,以实现均匀沉积。利用扫描电子显微镜(SEM)观察了织物的结构和不同织物类型的铜矿床的变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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