Establishment and Analysis of a New Type of TSV Equivalent Circuit Model

Abstract

Based on a new type of coaxial ring-tapered TSV structure, an equivalent circuit model of this structure is constructed in this paper to analyze the transmission characteristics. S11 and S21 are obtained with the geometric model and equivalent circuit model simulated by HFSS and ADS respectively. The experimental results show that the two models have a good fitting effect: in the range of 0-40 GHz, the maximum error of S11 is within 8 %; and the maximum error of S21 is within 5 %, which verifies the correctness of the equivalent circuit model. The specific effects of each parasitic parameter on S11 is found that the silicon substrate capacitance has a great impact on high frequency, and Sll can be increased by 0.15 dB with only 1 fF silicon substrate capacitance, and the remaining parasitic parameters have a small impact on S11.