Antiphase Boundaries, Magnetic Domains, and Magnetic Vortices in Ni-Mn-Ga Single Crystals

M. Vronka, L. Straka, M. Graef, O. Heczko
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Abstract

The interplay between antiphase boundaries (APBs), magnetic domain structure and functional properties was investigated in the martensitic state of Ni-Mn-Ga single crystals which showed magnetically induced martensite reorientation (MIR) with 6% strain. The APB density was controlled by different heat treatments and the APBs and magnetic domains were observed by Lorentz transmission electron microscopy (LTEM). Slow cooling at ~1 K/min resulted in a low density (<1/μm), air quenching in a medium density (≈8/μm), and water quenching in a high density (≈15/μm) of APBs. Abundant pinning of domain walls on APBs was observed, which resulted in one-to-one correspondence between the magnetic domain walls and antiphase boundaries (APBs), magnetic domain memory, and finer domain patterns for the high APB density. For low APB density, a labyrinth domain structure was established between domain walls pinned on APBs. For low and medium density of APBs the magnetization was oriented mostly parallel to the out-of-plane easy magnetization axis. For high APB density the magnetization switched to the in-plane orientation, indicating that the effective magnetic anisotropy became lower than the stray field energy, and magnetic vortices additionally appeared. The novel functionalities based on a combination of MIR and interactions of the magnetic structure with APBs are feasible since the MIR was observed even for the highest density of APBs.
Ni-Mn-Ga单晶的反相边界、磁畴和磁涡
研究了Ni-Mn-Ga单晶在马氏体状态下磁致马氏体重取向(MIR)的反相边界(APBs)、磁畴结构和功能性能之间的相互作用。通过不同热处理控制APB的密度,利用洛伦兹透射电镜(LTEM)观察APB和磁畴。在~1 K/min慢速冷却下,apb的密度为低(<1/μm),中密度为空气淬火(≈8/μm),高密度为水淬火(≈15/μm)。在APB上观察到大量的畴壁钉住,导致磁畴壁与反相边界(APB)一一对应,磁畴记忆和高APB密度的精细畴图。当APB密度较低时,固定在APB上的畴壁之间形成迷宫结构。低、中密度apb的磁化方向主要平行于面外易磁化轴。当APB密度较高时,磁化强度向面内方向转变,表明有效磁各向异性低于杂散场能,并出现磁涡流。基于MIR和磁性结构与apb相互作用的新功能是可行的,因为即使在最高密度的apb中也观察到MIR。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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