Superconductivity in ultra-thin CoSi2 epitaxial films

P. A. Badoz, A. Briggs, E. Rosencher, F. d'Avitaya
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引用次数: 11

Abstract

The first results on the superconducting properties of ultra-thin epitaxial CoSi 2 films are reported. The metal films are obtained by solid phase epitaxy under ultra high-vacuum conditions, with thicknesses ranging from 600 A down to 50 A. These films are stable against temperature cycling from 350 mK up to room temperature and superconducting for thicknesses down to 100 A. Results showing a reduction of the transition temperature and variations of the critical magnetic field with decreasing film thicknesses are presented. Furthermore, for very low film thicknesses (i.e. 100 A), an intermediate plateau is observed in the resistivity versus temperature curve. The physical origin of these phenomena is briefly discussed Preparation de couches minces de 50 a 600 A d'epaisseur, stables lors de cycles thermiques de 350 mK jusqu'a la temperature ambiante et supraconducteurs pour des epaisseurs superieures a 100 A. Diminution de la temperature critique et variations du champ magnetique critique quand l'epaisseur diminue. Observation d'un plateau dans la courbe de resistivite en fonction de la temperature pour la couche de 100 A
超薄CoSi2外延薄膜中的超导性
报道了超薄外延cosi2薄膜超导性能的初步结果。在超高真空条件下,采用固相外延法制备了厚度为600 ~ 50 A的金属薄膜。这些薄膜在从350 mK到室温的温度循环中是稳定的,并且在厚度低至100 A时具有超导性。结果表明,相变温度降低,临界磁场随膜厚的减小而变化。此外,对于非常低的薄膜厚度(即100 A),在电阻率-温度曲线中观察到一个中间平台。本文简要地讨论了这些现象的物理根源:制备50 ~ 600℃的热传导材料、350℃的热传导材料、环境温度和100℃的超导体材料。温度批判的减少,以及磁批判的变化和温度批判的减少。在100 A的高温下,观察高原丹斯的电阻率随温度的变化
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