N. Gupta, H. Shrimali, A. Makosiej, A. Vladimirescu, A. Amara
{"title":"Energy Efficient Comparator-Less Current-Mode TFET-CMOS Co-Integrated Scalable Flash ADC","authors":"N. Gupta, H. Shrimali, A. Makosiej, A. Vladimirescu, A. Amara","doi":"10.1109/MWSCAS47672.2021.9531911","DOIUrl":null,"url":null,"abstract":"This paper presents a novel TFET-CMOS co-integrated comparator-less, energy-efficient ADC architecture. The design utilizes the Negative Differential Resistance property of TFETs to generate thermometer code without using comparators. The design supports Dynamic Voltage Frequency Scaling. Binary-weighted TFET device sizing is used to generate thermometer code. TFETs used in this work are compatible with a 28nm FDSOI-CMOS process for fabrication. The most relevant performance numbers for 3- to 10-bit ADC architectures include speed of operation of 68 MHz with an ENOB evaluated greater than 2.38 for the 3-bit ADC; the FOM is in the range of 0.07 to 1.3 fJ/conversion for 3- to 10-bit designs with supply voltages from 0.4V to 1.2V, respectively. The proposed 5- and 6-bit designs show 46x [1] and 265x [2] improvement in FOM, respectively.","PeriodicalId":6792,"journal":{"name":"2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS)","volume":"57 1","pages":"297-300"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS47672.2021.9531911","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents a novel TFET-CMOS co-integrated comparator-less, energy-efficient ADC architecture. The design utilizes the Negative Differential Resistance property of TFETs to generate thermometer code without using comparators. The design supports Dynamic Voltage Frequency Scaling. Binary-weighted TFET device sizing is used to generate thermometer code. TFETs used in this work are compatible with a 28nm FDSOI-CMOS process for fabrication. The most relevant performance numbers for 3- to 10-bit ADC architectures include speed of operation of 68 MHz with an ENOB evaluated greater than 2.38 for the 3-bit ADC; the FOM is in the range of 0.07 to 1.3 fJ/conversion for 3- to 10-bit designs with supply voltages from 0.4V to 1.2V, respectively. The proposed 5- and 6-bit designs show 46x [1] and 265x [2] improvement in FOM, respectively.