Progress in CMOS-memristor integration

Abstract

The fast improvements that have been realized over the past 3 years in the understanding of the materials science, physics and engineering of memristors are briefly reviewed. The electroforming phenomena and the associated importance for the understanding of novel device structures has been revealed from a materials science standpoint, complemented with a spectromicroscopy study and electronic microscopy. These studies were utilized to substantiate a realistic physical model that permitted the development of differential equations governing device behavior, as well as SPICE models and stochastic analysis. Finally, we briefly highlight recent progress in device endurance, which surpasses that of FLASH by several orders of magnitude.