Двухфотонное внутризонное поглощение поляризованного света и его линейно-циркулярный дихроизм в алмазоподобных полупроводниках

Abstract

The theory of interband two-photon absorption of a strong light wave in semiconductors with a complex band is developed. An analytical expression is obtained for the probability of a two-photon interband transition, which contains a dependence on the intensity, polarization vector, and frequency of the absorbed light, as well as on the band parameters of the semiconductor, where the contribution of the Rabi effect to the coefficients of two-quantum absorption of light is taken into account. It is shown that the shape of the absorption edge and linear-circular dichroism depends on the degree of light polarization and on the Rabi parameter.