A low-power SRAM design with enhanced stability and ION/IOFF ratio in FinFET technology for wearable device applications

IF 1.1 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Electronics Pub Date : 2023-07-25 DOI:10.1080/00207217.2023.2238326

Erfan Abbasian, S. Birla, Ashish Sachdeva, Elangovan Mani

引用次数: 0

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低功耗SRAM设计，具有更高的稳定性和离子/IOFF比，适用于可穿戴设备应用的FinFET技术

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Journal of Electronics 工程技术-工程：电子与电气

CiteScore

3.30

自引率

15.40%

发文量

110

审稿时长

8 months

期刊介绍： The International Journal of Electronics (IJE) supports technical applications and developing research at the cutting edge of electronics. Encompassing a broad range of electronic topics, we are a leading electronics journal dedicated to quickly sharing new concepts and developments the field of electronics.