Terahertz radiation of jerk photocurrent

B. Mendoza, Benjamin M. Fregoso
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Abstract

We compute the jerk current tensor of GaAs, Si, and ferroelectric single-layer GeS, GeSe, SnS, and SnSe. We find peak values of the order of $10^{14}$ mA/V$^3$s$^2$ in GaAs and Si within the visible energy spectrum and an order of magnitude larger in single-layer GeS, GeSe, SnSe and SnS. We show that the detailed knowledge of this tensor and its large value in single-layer GeS, GeSe, SnSe and SnS make it possible to predict the magnitude and angle of rotation of polarization of intense terahertz pulses generated in photoconductive switches and point to alternative functionalities of these devices.
脉冲光电流的太赫兹辐射
我们计算了GaAs, Si和铁电单层GeS, GeSe, SnS和SnSe的激振电流张量。我们发现,在可见能谱内,GaAs和Si的峰值为$10^{14}$ mA/V$^3$s$^2$,而单层GeS、GeSe、SnSe和SnS的峰值要大一个数量级。我们表明,该张量的详细知识及其在单层GeS, GeSe, SnSe和SnS中的大值使得可以预测光导开关中产生的强太赫兹脉冲的极化幅度和旋转角度,并指出这些器件的替代功能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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