The IR electromagnetic effect induced in the fine step bands of the (001) face of GaAs(Te) by applying an alternating field

Kenzo Sato
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Abstract

The optical sensitivity of the excess impurity lone-pair electrons is discussed on the basis of the values of the IR reflection integral which were derived from the plasma edge profile of the (001) face of GaAs(Te) for eight levels of dopant concentration. From the analysis of the variation in the reflectivity including annihilation and creation of some fine step bands induced by applying an alternating electromagnetic field with frequency f = A × 10m−1 (m = 1, 2, …, 7) parallel to the <100 > direction, we estimate that this sensitive effect may be induced primarily by the dynamical variation of the matrix elements of these oscillators, the values of which are determined by the dipole moments and oscillator concentrations. By using the Nf-R relations of the fine step bands measurable at 274 cm-1, 290 cm-1 and 315 cm-1, the degree of variation in the effective oscillator concentration and the effective charge are estimated and reasonable values are obtained, by comparison with the Born effective charge the dipole-moments were determined. The step property of the nine fine step bands superimposed on the fundmental lattice band and the plasma edge is analysed for the two types of sample.

在交变电场作用下,在GaAs(Te)(001)表面的精细步进带中产生了红外电磁效应
根据砷化镓(Te)表面等离子体边缘轮廓在8个掺杂浓度水平下的红外反射积分值,讨论了过量杂质孤对电子的光学灵敏度。通过对平行于<100 >的频率为f = A × 10m−1 (m = 1,2,…,7)的交变电磁场引起的反射率变化,包括湮灭和一些精细阶跃带的产生的分析;我们估计,这种敏感效应可能主要是由这些振子的矩阵元素的动态变化引起的,其值是由偶极矩和振子浓度决定的。利用274 cm-1、290 cm-1和315 cm-1处可测的精细阶跃带的Nf-R关系,估计了有效振子浓度和有效电荷的变化程度,得到了合理的值,并与玻恩有效电荷进行了比较,确定了偶极矩。分析了两种样品在基本晶格带和等离子体边缘上叠加的9个精细阶跃带的阶跃特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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