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Deep Level Defect Transient Spectroscopy Analysis of 4H-SiC SBD and JBS Diodes

Journal of The Korean Institute of Electrical and Electronic Material Engineers Pub Date : 2021-01-01 DOI:10.4313/JKEM.2021.34.3.214
Dong-Wook Byun, M. Shin, J. Moon, W. Bahng, W. Shin, Jong‐Min Oh, Chulhwan Park, S. Koo
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4H-SiC SBD和JBS二极管的深能级缺陷瞬态光谱分析
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Journal of The Korean Institute of Electrical and Electronic Material Engineers
Journal of The Korean Institute of Electrical and Electronic Material Engineers
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