Hanyu Zhang, Linjie Zhou, Liangjun Lu, Z. Guo, Jian Xu, Xuecheng Fu, Jianping Chen, B. Rahman
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引用次数: 1
Abstract
We report a novel silicon MZI switch activated by the phase change of a sub-micrometer-size Ge2Sb2Te5 (GST) thin film. The phase change of GST is triggered by electrical pulses, leading to two “self-holding” switching states. Extinction ratio change of 5-dB is measured from the MZI spectrum.
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