Синтез методом молекулярно-пучковой эпитаксии и свойства InAs-квантовых точек в теле AlGaAs нитевидных нанокристаллов

Физика и техника полупроводников Pub Date : 2023-01-01 DOI:10.21883/ftp.2023.04.55891.03k

Р.Р. Резник, В.О. Гридчин, К.П. Котляр, А. И. Хребтов, Е.В. Убыйвовк, А.С. Драгунова, Н.В. Крыжановская, Г. Э. Цырлин

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Abstract

We present the results of experimental studies on the synthesis by molecular-beam epitaxy of AlGaAs nanowires with InAs quantum dots. The morphological, structural, and optical properties of the grown nanostructures have been studied. It is important to note that the emission from quantum dots is observed in the wavelength range from 750 to 970 nm. Assumptions about the nature of short-wavelength emission from quantum dots are formulated. In particular, one of the reasons may be a significant desorption of indium atoms and the presence of gallium atoms in catalyst drops during the growth at a substrate temperature of 510◦C. The proposed technology opens up new possibilities for integration direct-gap III−V materials with a silicon platform for various applications in photonics and quantum communications.

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AlGaAs纳米晶体中的分子束外延和InAs量子点特性合成

本文报道了用分子束外延法合成含有InAs量子点的AlGaAs纳米线的实验研究结果。研究了生长的纳米结构的形态、结构和光学性质。值得注意的是，量子点的发射是在750到970 nm的波长范围内观察到的。提出了关于量子点短波发射性质的假设。特别是，其中一个原因可能是在510◦C的衬底温度下生长期间铟原子的显着解吸和催化剂中镓原子的存在。所提出的技术为直接间隙III - V材料与硅平台的集成开辟了新的可能性，可用于光子学和量子通信中的各种应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Физика и техника полупроводников

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