Application of low-temperature N/sub 2/O-annealed oxide and chemical oxide for both boron penetration and gate depletion reductions for thin p/sup +/ tungsten polycide gate

Yunseok Chun, Kwang Pyo Lee, Sang Su Lee, Sang Chul Kim, Byung-Seop Hong, Hong Yang
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Abstract

Boron behavior in p/sup +/ W-polycide gate used for high performance surface-channel pMOSFET was investigated. The poly structure and poly-WSi/sub x/ interface play an important role in the characteristics of the MOSFET. It was found that large-grain poly showed severe boron penetration compared to an 800 /spl Aring/ amorphous Si layer. In addition, boron out-diffusion into the WSi/sub x/ layer causes severe gate depletion which gives rise to low saturation current. Application of chemical oxide between poly and tungsten silicide turns out to be good barrier to block fluorine diffusion into the gate oxide as well as boron out-diffusion into the WSi/sub x/ layer. A surface channel pMOSFET using N/sub 2/O-annealed oxide and chemical oxide shows excellent characteristics of high saturation current, low leakage and gate depletion.
低温N/sub - 2/ o退火氧化物和化学氧化物在p/sup +/钨多晶硅薄栅中硼渗透和栅损耗的应用
研究了用于高性能表面沟道pMOSFET的p/sup +/ w -多晶硅栅极中硼的行为。多晶结构和多晶wsi /sub - x/接口对MOSFET的特性起着重要的作用。结果表明,与800 /spl的非晶态硅相比,大晶粒聚层表现出严重的硼渗透。此外,硼向外扩散到WSi/sub x/层会导致严重的栅极损耗,从而导致低饱和电流。在聚硅化钨和硅化钨之间应用化学氧化物可以很好地阻挡氟向栅极氧化物的扩散和硼向WSi/sub /层的外扩散。采用N/sub / o退火氧化物和化学氧化物制备的表面沟道pMOSFET具有高饱和电流、低泄漏和栅极损耗等优良特性。
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