Auger recombination in 1.3-/spl mu/m InAs/GaInAs quantum dot lasers studied using high pressure

2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666) Pub Date : 2003-06-22 DOI:10.1109/CLEOE.2003.1312236

I. Marko, A. Andreev, A. Adams, R. Krebs, J. Reithmaier, A. Forchel

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Abstract

The Auger recombination in 1.3/spl mu/m InAs/GalnAs quantum dot lasers were investigated. To analyse the experimental results, theoretical model was used which includes strain, piezoelectric field and electronic structure calculated in the QDs of truncated pyramid shape. It was found that the radiative current increases with pressure, but the Auger recombination current decreases with pressure and is the dominant recombination path at room temperature in 1.3/spl mu/m QD lasers.

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利用高压研究了1.3-/spl μ m InAs/GaInAs量子点激光器中的俄歇复合

研究了1.3/spl μ m InAs/GalnAs量子点激光器中的俄歇复合。为了分析实验结果，采用理论模型计算了截断金字塔形量子点的应变、压电场和电子结构。结果表明，在1.3/spl mu/m QD激光器中，辐射电流随压力增大而增大，而俄热复合电流随压力减小，是室温下的主要复合路径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666)

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