Characterization of optically-controlled terahertz modulation based on a hybrid device of perovskite and silicon

Abstract

Terahertz wave transmission could be optically controlled based on electron accumulation at the interface of a hybrid structure of Si and CH3NH3PbI3 perovskite. The modulation efficiency was enhanced by a factor of approximately 4 than those at bare Si under a low irradiance of 532-nm continuous laser (<0.5 W/cm2). Based on THz time-domain spectroscopy and Drude modeling, we characterized the optical and electronic properties of the hybrid device in terms of complex dielectric constant, complex conductivity, carrier density, and mobility.