An Overview of the Evolution of the Porous Silicon material: A review

Abstract

Recently, the properties and applications of porous has become the main subject of a vast numbers of books and review articles. Porous silicon has demonstrated significant versatility and promise for a wide range of optoelectronic applications due to its large surface area and intense photoluminescence at room temperature. In this review, we describe the fabrication techniques and experimental improvements made towards porous silicon (PSi) and we provide a full picture of realization and characterization of this material. We also highlight its important chemical, structure and surface properties. Additionally, we will introduced the techniques that have been used to characterize porouse silicon, including Fourier transform infrared spectroscopy, X-ray diffraction measurements, atomic force microscope images (AFM) and a scanning probe microscope (SEM). Moreover, the effect of the current density and etching time are also documented in this review. In summary, porous silicon has undergone vast improvement in both fabrication and characterization methods, which makes it an attractive modern material.