350mW G-band medium power amplifier fabricated through a new method of 3D-copper additive manufacturing

2015 IEEE MTT-S International Microwave Symposium Pub Date : 2015-07-27 DOI:10.1109/MWSYM.2015.7167037

H. Kazemi, D. Miller, A. Mohan, Z. Griffith, Y. Jin, J. Kwiatkowski, L. Tran, M. Crawford

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引用次数: 18

Abstract

A new design methodology and 3D additive fabrication process is used to demonstrate a 16-Way medium power amplifier (MPA) at G-band frequency range. Advanced high bandwidth, high gain and power InP DHBT three stage MMIC is used for the MPA integration, capable of 50mW output power and >20 dB small signal gain. Novel micro-machined WR4 to CPW transitions are used to accommodate the MMICs and connect to the 16way splitter-combiner network. These transitions use wire-bonds demonstrating the capability at sub-mmw frequency range. The broadband transitions showcase <;0.5 dB insertion loss and exhibit high tolerance and repeatability due to their batch additive manufacturing. The MPA was assembled using 16 mounted MMICs in transitions and demonstrated >10 dB small signal gain from 200-240 GHz. Large signal characterization showcased high saturated output power of 450mW at 205 GHz, 400 mW at 215 GHz, 350mW at 225 GHz and 283 mW at 233 GHz in an ultra-compact volume of 3.6 cm3 representing a functional power density of >7.7 mW/cm3.

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采用3d -铜增材制造新方法制备350mW g波段中功率放大器

采用一种新的设计方法和3D增材制造工艺，对g频段16路中功率放大器(MPA)进行了演示。MPA集成采用先进的高带宽、高增益、大功率InP DHBT三级MMIC，输出功率为50mW，小信号增益> 20db。采用新颖的微机械WR4到CPW转换，以容纳mmic并连接到16路分裂合成器网络。这些转换使用线键，展示了在亚毫米波频率范围内的能力。宽带转换在200-240 GHz范围内显示10 dB的小信号增益。大信号特性展示了205 GHz时450mW、215 GHz时400mw、225 GHz时350mW和233 GHz时283 mW的高饱和输出功率，其超紧凑体积为3.6 cm3，功能功率密度>7.7 mW/cm3。

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2015 IEEE MTT-S International Microwave Symposium

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