Photoluminescence study of bare freestanding gallium arsenide nanowires grown by vapor-liquid-solid method

2009 Conference on Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics Pub Date : 2009-10-30 DOI:10.1109/CLEOPR.2009.5292497

Guoqiang Zhang, K. Tateno, H. Sanada, T. Tawara, H. Gotoh, H. Nakano

引用次数: 0

Abstract

We studied size-dependent optical properties of bare freestanding gallium arsenide nanowires grown by vapor-liquid-solid method. In contrast to blueshift of luminescence peaks usually induced by band filling, redshift was observed for small quantum wires.

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气-液-固法制备独立砷化镓纳米线的光致发光研究

研究了气-液-固法制备的裸独立砷化镓纳米线的光学性质。与通常由带填充引起的发光峰蓝移相比，小量子线观察到红移。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2009 Conference on Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics

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