A 40nm CMOS 12b 200MS/s Single-amplifier Dual-residue Pipelined-SAR ADC

M. Seo, Ye-Dam Kim, Jae-Hyun Chung, S. Ryu
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引用次数: 9

Abstract

This work proposes a dual-residue pipelined-SAR ADC that generates two residue signals from a single amplifier, which eliminates the need for gain-matching calibration. A capacitive interpolating SAR conversion technique is also proposed for the second stage for power efficiency. A prototype ADC fabricated in a 40nm CMOS occupies an active area of 0.026 mm2 and achieves an SNDR of 62.1 dB at Nyquist and 67.1 dB SFDR under a 0.9 V supply.
一种40nm CMOS 12b 200MS/s单放大器双残差流水线sar ADC
本工作提出了一种双残差管道式sar ADC,该ADC从单个放大器产生两个残差信号,从而消除了对增益匹配校准的需要。针对第二阶段的功率效率问题,提出了一种电容插值SAR转换技术。在40nm CMOS中制作的原型ADC占用0.026 mm2的有源面积,在Nyquist下实现62.1 dB的SNDR,在0.9 V电源下实现67.1 dB的SFDR。
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