Simulation on the Interfacial Singular Stress-strain Induced Cracking of Microelectronic Chip Under pPower On-off Cycles

Abstract

Thermal fatigue failure of a microelectronic chip usually initiates from the interface between solder joint and substrate for the mismatch in coefficient of thermal expansion (CTE). Because of the viscoelastic creep properties of the solder, the interfacial stress-strain are, strongly, temperature and time dependent. Based on the established constitutive models of solder materials, the three-dimensional FEM analysis of the microelectronic chip undergoing power on-off thermal cycles is carried out. The time dependent stress-strain singular fields at the solder/substance interface are obtained, and the singular field parameters are quantitatively evaluated. Furthermore, the crack nucleation behavior of thermal fatigue failure are tested to verify the conclusion that singular stress-strain promote thermal fatigue failure from the solder/substance interface.