{"title":"A 10 GHz phase noise filter with 10.6 dB phase noise suppression and −116 dBc/Hz sensitivity at 1 MHz offset","authors":"Shilei Hao, Q. Gu","doi":"10.1109/MWSYM.2016.7540343","DOIUrl":null,"url":null,"abstract":"This paper presents a phase noise filter technique enabled by the delay-line and PD/CP based frequency discriminator with fully automatic calibration. It features wide bandwidth and insensitivity to amplitude noise. At low/high gain mode, it achieves 10.6/15 dB phase noise suppression with -116/-114.9 dBc/Hz sensitivity at 1 MHz offset, respectively. The suppression bandwidth is 100 kHz-10 MHz with input operating frequency range of 9.99-10.10 GHz. This proof-of-concept design is fabricated in a 65 nm CMOS process with the chip area of 1.68 mm × 1.5 mm. The circuit consumes 102 mW power.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"81 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE MTT-S International Microwave Symposium (IMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2016.7540343","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
This paper presents a phase noise filter technique enabled by the delay-line and PD/CP based frequency discriminator with fully automatic calibration. It features wide bandwidth and insensitivity to amplitude noise. At low/high gain mode, it achieves 10.6/15 dB phase noise suppression with -116/-114.9 dBc/Hz sensitivity at 1 MHz offset, respectively. The suppression bandwidth is 100 kHz-10 MHz with input operating frequency range of 9.99-10.10 GHz. This proof-of-concept design is fabricated in a 65 nm CMOS process with the chip area of 1.68 mm × 1.5 mm. The circuit consumes 102 mW power.