Electrical and Photoelectric Properties of Organic-Inorganic Heterojunctions PEDOT:PSS/n-CdTe

H. Parkhomenko, M. Solovan, A. Mostovyi, I. Orletskyi, V. Brus
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Abstract

PEDOT: PSS thin films are widely used as transparent coatings in flexible semiconductor devices including solar cells. However, they are not widely used as transparent coatings in combination with crystal substrates. This work shows the possibility of using PEDOT:PSS thin films as a frontal transparent conducting layer in hybrid organic-inorganic Schottky type heterojunctions of the PEDOT:PSS/n‑CdTe, which were prepared by deposition of PEDOT:PSS thin films (using the spin-coating method) on crystalline cadmium telluride substrates. The current-voltage (in a wide temperature range) and capacitance-voltage (at room temperature) characteristics of heterojunctions were measurement and analyzed. It has been established that PEDOT:PSS/n-CdTe heterojunctions have good diode properties with a high rectification ratio RR≈105, a potential barrier height φ0 = 0.95 eV, and series Rs = 91 Ohm and shunt Rsh = 5.7 × 107 Ohm resistances. Analysis of the forward branches of the I–V characteristics of heterojunctions showed that the dominant charge transfer mechanisms are determined by the processes of radiative recombination at low biases (3kT/e 1013 Jones) are very promising for further detailed analysis and improvement. The proposed concept of a hybrid organic-inorganic heterojunction also has potential for use in inexpensive γ- and X-ray detectors.
有机-无机异质结PEDOT:PSS/n-CdTe的电学和光电性质
PSS薄膜作为透明涂层广泛应用于柔性半导体器件,包括太阳能电池。然而,它们并没有广泛地作为透明涂层与晶体基底结合使用。本研究表明,在结晶碲化镉衬底上沉积PEDOT:PSS薄膜(使用自旋镀膜法)制备的PEDOT:PSS/n - CdTe杂化有机-无机肖特基异质结中,使用PEDOT:PSS薄膜作为正面透明导电层的可能性。测量并分析了异质结的电流-电压(宽温度范围)和电容-电压(室温)特性。结果表明,PEDOT:PSS/n-CdTe异质结具有良好的二极管性能,整流比RR≈105,势垒高度φ0 = 0.95 eV,串联电阻Rs = 91欧姆,并联电阻Rsh = 5.7 × 107欧姆。对异质结正分支的I-V特性分析表明,优势电荷转移机制是由低偏置(3kT/e 1013 Jones)下的辐射复合过程决定的,这是非常有希望进一步详细分析和改进的。提出的混合有机-无机异质结的概念也有可能用于廉价的γ和x射线探测器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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