Gate Tunable Memtransistor based on Monolayer Molybdenum Disulfide

Abstract

As a typical representative of two-dimensional (2D) materials, recently Mos2 was considered as the candidate to the development of electronic synaptic devices due to its ultrathin thickness and special properties. However, dual-terminal artificial synapse devices still exit the challenges about the simulation of biological synapses, which is hard for two-terminal devices to update and read the synaptic weight at the same time. In this work, Mos2 films were grown by chemical vapor deposition (the sample's largest single triangular size is about 83µm), and three-terminal synaptic devices based on back-gate FETs on Si/SiO2 substrate were fabricated. MoS2 sample's morphology and device's structure were characterized by Raman spectroscopy and optical microscope (OM). The memtransistor has excellent resistive switching (RS) behavior. By optimizing the pulse, the memtransistor showed a better conductivity linearity, and typical synaptic characteristics were mimicked, such as short-term/long-term plasticity (STP/LTP), excitatory post-synaptic current (EPSC)/inhibitory post-synaptic current (IPSC) and paired-pulse facilitation (PPF).