K. Matsubara, Tsutomu Nagasawa, Yoshinobu Kaneda, Hidenori Mitani, Hiroshi Sato, Takashi Iwase, Y. Aoki, K. Maekawa, H. Yamakoshi, T. Ito, H. Kondo, T. Kono
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引用次数: 4
Abstract
To expand IoT application ranges, ultra-low active energy operations are expected to edge devices. Especially, read energy reduction in embedded Flash (eFlash) is strongly required to enable real-time sensing with limited energy generated by energy harvesting (EH). In this work, 1.5MB 2T-MONOS eFlash macro is fabricated with 65nm SOTB technology, using low-energy sense amplifier and data transmission circuit techniques which enhance advantages of SOTB devices. The proposed eFlash achieves 0.22 pJ/bit read energy with 64MHz read access, which is low enough to utilize EH technologies as energy sources.
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