F. Disegni, R. Annunziata, A. Molgora, G. Campardo, P. Cappelletti, P. Zuliani, P. Ferreira, A. Ventre, Giuseppe Castagna, A. Cathelin, A. Gandolfo, F. Goller, S. Malhi, D. Manfrè, A. Maurelli, C. Torti, F. Arnaud, M. Carfì, M. Perroni, M. Caruso, S. Pezzini, G. Piazza, O. Weber, M. Peri
{"title":"Embedded PCM macro for automotive-grade microcontroller in 28nm FD-SOI","authors":"F. Disegni, R. Annunziata, A. Molgora, G. Campardo, P. Cappelletti, P. Zuliani, P. Ferreira, A. Ventre, Giuseppe Castagna, A. Cathelin, A. Gandolfo, F. Goller, S. Malhi, D. Manfrè, A. Maurelli, C. Torti, F. Arnaud, M. Carfì, M. Perroni, M. Caruso, S. Pezzini, G. Piazza, O. Weber, M. Peri","doi":"10.23919/VLSIC.2019.8778129","DOIUrl":null,"url":null,"abstract":"The paper proposes a BEOL PCM-based e-NVM solution integrated in a 28nm FD-SOI CMOS technology, giving excellent performances in terms of area, read and write time and temperature range. The integration of a 6MB PCM in an automotive grade (Tj up to 165C) microcontroller chip is presented here, exhibiting a robust solution satisfying all criteria of the demanding automotive environment. The Gex Sby Tez material used for the PCM [1] has been tuned to reach the 165C compliance and 10 years data retention. CMOS 28nm FD-SOI has been determined as the optimal technology to exploit PCM capabilities [2]. Technology also offers full feature 5V devices required for automotive application. Body bias of the FD-SOI allows controlling the quiescent leakage both in circuitry and in the unselected bits inside the memory array, optimizing the functionality.","PeriodicalId":6707,"journal":{"name":"2019 Symposium on VLSI Circuits","volume":"56 1","pages":"C204-C205"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIC.2019.8778129","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
The paper proposes a BEOL PCM-based e-NVM solution integrated in a 28nm FD-SOI CMOS technology, giving excellent performances in terms of area, read and write time and temperature range. The integration of a 6MB PCM in an automotive grade (Tj up to 165C) microcontroller chip is presented here, exhibiting a robust solution satisfying all criteria of the demanding automotive environment. The Gex Sby Tez material used for the PCM [1] has been tuned to reach the 165C compliance and 10 years data retention. CMOS 28nm FD-SOI has been determined as the optimal technology to exploit PCM capabilities [2]. Technology also offers full feature 5V devices required for automotive application. Body bias of the FD-SOI allows controlling the quiescent leakage both in circuitry and in the unselected bits inside the memory array, optimizing the functionality.
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