Optical and Electrical Properties of Antimony and Fluorine Doped Tin Oxide Thin Films

Abstract

The Sb:F:SnO 2 layers (AR) were prepared by spray pyrolysis method. The anti-reflective layers (AR) heat-treated at 500℃ for 30 min (solution amount 20 cc and 25 cc) have shown an improved crystallinity with crystallite size of 38-39 nm, high optical transmission of around 70 % at 450 nm. Incorporation of anti-reflective layer at cathode interface of SiO 2 /Si(N) devices increased the power conversion efficiency from 1.2% to 2.7% which is mainly contributed from photocurrent enhancement. The enhanced efficiency mainly contributed to the increase in J sc . It is attributed to enhanced light absorption and better charge transport in the SiO 2 /Si (N) device with Sb:F:SnO 2 AR layer. Results of optical and electrical studies show that the films are well suited for thin film solar cell as a window layer.