Reliability Modeling and Simulation Analysis of IGBT Devices based on Saber Software

2021 IEEE 16th Conference on Industrial Electronics and Applications (ICIEA) Pub Date : 2021-08-01 DOI:10.1109/ICIEA51954.2021.9516142

W. Wang, Qilong Jiang, Zhenwei Li, Guangzhi Yang, Tao Wang, Dong Liu

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Abstract

An IGBT reliability model based on Saber software which can reflect the aging process of IGBT is proposed in this research in order to better reflect the changes of multi-feature values in IGBT reliability model. At first, the coupling relationship among electrical, thermal and mechanical of IGBT is deeply analyzed, and then an IGBT reliability evaluation model based on Saber software is established according to the failure mechanism of IGBT bond line, and its static and dynamic characteristics are verified. The simulation results are in good agreement with the experimental results. The effects of collector current $I_{c}$ and gate driving voltage $U_{ge}$ on the saturation voltage drop of IGBT are verified by the built model. The conclusions are as follows: 1) the saturation voltage drop increases continuously with the deepening of the aging degree of IGBT. 2) the saturation voltage drop is affected by the collector current and driving voltage passing through IGBT. The study of this model has a certain guiding significance for realizing the reliability evaluation of IGBT and improving the reliability of power electronic power conversion devices.

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基于Saber软件的IGBT器件可靠性建模与仿真分析

为了更好地反映IGBT可靠性模型中多特征值的变化，本研究提出了一种基于Saber软件能够反映IGBT老化过程的IGBT可靠性模型。首先对IGBT的电、热、力学耦合关系进行了深入分析，然后根据IGBT粘结线失效机理，基于Saber软件建立了IGBT可靠性评估模型，并对其静、动态特性进行了验证。仿真结果与实验结果吻合较好。通过建立的模型验证了集电极电流$I_{c}$和栅极驱动电压$U_{ge}$对IGBT饱和压降的影响。结果表明:1)随着IGBT老化程度的加深，饱和压降不断增大。2)饱和压降受通过IGBT的集电极电流和驱动电压的影响。该模型的研究对于实现IGBT的可靠性评估，提高电力电子电力转换装置的可靠性具有一定的指导意义。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2021 IEEE 16th Conference on Industrial Electronics and Applications (ICIEA)

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