A W-band SiGe power amplifier with Psat of 23 dBm and PAE of 16.8% at 95GHz

Abstract

This paper presents a double-stacked four-way combined W-band power amplifier (PA) in 0.13μm SiGe BiCMOS process with 3dB small-signal bandwidth between 86.6–103.3GHz. This chip achieves a saturated power (Psat) of 23 dBm at a peak PAE of 16.8% at 95 GHz with Psat of more than 21 dBm across 85105 GHz. To the best of the authors' knowledge, this is the highest efficiency reported for silicon-based PAs at these frequencies with output power greater than 23 dBm. This paper also demonstrates the modulation measurements of constellation schemes QPSK, 16-QAM and 64-QAM in the W-Band with data rates up to 12Gbps.