Novel silicon photomultiplier (SiPM) detector arrays

T. Gandhi, N. Hartsough, J. Iwanczyk, W. Barber
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引用次数: 0

Abstract

We are combining recent developments in nanomaterials with the concept of silicon photomultipliers (SiPMs) to develop cost-effective, large-area photodetectors for applications in medical imaging and other low-light sensing applications. Silicon nanowires are grown inside of a template made up of an array of insulating nanotubes on a quartz substrate, generating a close-packed array of vertically-oriented nanowires. A gold layer positioned at the bottom of each nanotube acts as the catalyst for silicon growth. By doping the silicon as it is grown, each nanowire becomes a p-i-n photodiode. A resistive layer provides the necessary quenching resistance for each photodiode, and pixels are defined by ganging the outputs of a region of nanowires together. Preliminary results of the growth process are presented.
新型硅光电倍增管(SiPM)探测器阵列
我们正在将纳米材料的最新发展与硅光电倍增管(SiPMs)的概念相结合,开发具有成本效益的大面积光电探测器,用于医学成像和其他低光感测应用。硅纳米线生长在由石英衬底上的绝缘纳米管阵列组成的模板内,从而产生垂直方向的纳米线紧密排列。位于每个纳米管底部的金层充当硅生长的催化剂。通过在生长过程中掺杂硅,每条纳米线都变成了一个p-i-n光电二极管。电阻层为每个光电二极管提供必要的淬火电阻,像素通过将纳米线区域的输出连接在一起来定义。给出了生长过程的初步结果。
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