InP-based Sb-free Lasers and Photodetectors in 2-3 μm Band

Abstract

Zhang et al. efforts on the explore of InP-based Sb-free 2-3 μm band lasers and photodetectors are introduced, including the 2-2.5 μm band type I InGaAs MQW lasers under pseudomorphic triangle well scheme, 2.5-3.0 μm band type I InAs MQW lasers under metamorphic strain compensated well scheme, as well as InGaAs photodetectors of high indium contents with cut-off wavelength large than 1.7 μm. All device structures are grown using gas source MBE method, and CW operation above room temperature have been reached for the lasers with wavelength less than 2.5 μm. Pulse operation of 2.9 μm lasers at TE temperature also have been reached The dark current of 2.6 μm InGaAs photodetectors have been decreased notably with the inserting of supperlattice electron barriers, those types of epitaxial materials have been used to the development of FPA modules for space remote sensing applications.