Detecting stability faults in sub-threshold SRAMs

Chen-Wei Lin, Hao-Yu Yang, Chin-Yuan Huang, Hung-Hsin Chen, M. Chao
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Abstract

Detecting stability faults has been a crucial task and a hot research topic for the testing of conventional super-threshold 6T SRAM in the past. When lowering the supply voltage of SRAM to the subthreshold region, the impact of stability faults may significantly change, and hence the test methods developed in the past for detecting stability faults may no longer be effective. In this paper, we first categorize the subthreshold-SRAM designs into different types according to their bit-cell structures. Based on each type, we then analyze the difference of its stability faults compared to the conventional super-threshold 6T SRAM, and discuss how the stability-fault test methods should be modified accordingly. A series of experiments are conducted to validate the effectiveness of each stability-fault test method for different types of subthreshold-SRAM designs.
检测亚阈值sram的稳定性故障
稳定性故障检测一直是传统超阈值6T SRAM测试的关键任务和研究热点。当SRAM的供电电压降低到亚阈值区域时,稳定性故障的影响可能会发生显著变化,因此过去开发的检测稳定性故障的测试方法可能不再有效。在本文中,我们首先根据其位元结构将亚阈值sram设计分为不同类型。在此基础上,分析了其稳定性故障与常规超阈值6T SRAM的差异,并讨论了稳定性故障测试方法应如何进行相应的修改。针对不同类型的亚阈值sram设计,通过一系列实验验证了每种稳定性故障测试方法的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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