E. Xie, M. Stonehouse, R. Ferreira, J. McKendry, J. Herrnsdorf, Xiangyu He, S. Rajbhandari, H. Chun, Aravind V. N. Jalajakumari, Oscar Almer, S. Videv, G. Faulkner, I. Watson, E. Gu, R. Henderson, D. O’brien, H. Haas, M. Dawson
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引用次数: 2
Abstract
We demonstrate the development, performance and application of a GaN-based micro-light emitting diode array sharing a common p-electrode with individual-addressed n-electrodes. These individually-addressed n-electrodes minimize the series-resistance difference from conductive paths, and offer compatibility with n-type metal-oxide-semiconductor transistor-based drivers for faster modulation.
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