Coming Up N3XT, After 2D Scaling of Si CMOS

William Hwang, W. Wan, S. Mitra, H. Wong
{"title":"Coming Up N3XT, After 2D Scaling of Si CMOS","authors":"William Hwang, W. Wan, S. Mitra, H. Wong","doi":"10.1109/ISCAS.2018.8351756","DOIUrl":null,"url":null,"abstract":"As two-dimensional scaling of Si CMOS crosses the nanometer threshold, from 7 nm, 5 nm, 3 nm, toward 1 nm technology nodes, will it continue to provide the energy efficiency required of future computing systems? A scalable, fast, and energy-efficient computation platform that may provide another 1,000× in computing energy efficiency (energy-execution time product) will have massive on-chip memory co-located with highly energy-efficient computing logic, enabled by 3D integration (e.g., monolithic) with ultra-dense and fine-grained connectivity. There will be multiple layers of memories interleaved with computing logic, sensors, and application-specific devices. We call this technology platform N3XT, Nano-engineered Computing Systems Technology. In this paper, we give an overview of the nanoscale memory and logic technologies that enable N3XT.","PeriodicalId":6569,"journal":{"name":"2018 IEEE International Symposium on Circuits and Systems (ISCAS)","volume":"81 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on Circuits and Systems (ISCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCAS.2018.8351756","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

As two-dimensional scaling of Si CMOS crosses the nanometer threshold, from 7 nm, 5 nm, 3 nm, toward 1 nm technology nodes, will it continue to provide the energy efficiency required of future computing systems? A scalable, fast, and energy-efficient computation platform that may provide another 1,000× in computing energy efficiency (energy-execution time product) will have massive on-chip memory co-located with highly energy-efficient computing logic, enabled by 3D integration (e.g., monolithic) with ultra-dense and fine-grained connectivity. There will be multiple layers of memories interleaved with computing logic, sensors, and application-specific devices. We call this technology platform N3XT, Nano-engineered Computing Systems Technology. In this paper, we give an overview of the nanoscale memory and logic technologies that enable N3XT.
即将到来的N3XT,在Si CMOS的二维缩放之后
随着Si CMOS的二维尺度跨越纳米阈值,从7nm、5nm、3nm,到1nm的技术节点,它能否继续提供未来计算系统所需的能效?一个可扩展的、快速的、节能的计算平台可以提供另外1000倍的计算能效(能量-执行时间产品),它将拥有大量的片上内存,并具有高能效的计算逻辑,通过具有超密集和细粒度连接的3D集成(例如,单片集成)实现。将有多层存储器与计算逻辑、传感器和特定应用的设备交织在一起。我们称这个技术平台为N3XT,即纳米工程计算系统技术。在本文中,我们概述了实现N3XT的纳米级存储和逻辑技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信