{"title":"Coming Up N3XT, After 2D Scaling of Si CMOS","authors":"William Hwang, W. Wan, S. Mitra, H. Wong","doi":"10.1109/ISCAS.2018.8351756","DOIUrl":null,"url":null,"abstract":"As two-dimensional scaling of Si CMOS crosses the nanometer threshold, from 7 nm, 5 nm, 3 nm, toward 1 nm technology nodes, will it continue to provide the energy efficiency required of future computing systems? A scalable, fast, and energy-efficient computation platform that may provide another 1,000× in computing energy efficiency (energy-execution time product) will have massive on-chip memory co-located with highly energy-efficient computing logic, enabled by 3D integration (e.g., monolithic) with ultra-dense and fine-grained connectivity. There will be multiple layers of memories interleaved with computing logic, sensors, and application-specific devices. We call this technology platform N3XT, Nano-engineered Computing Systems Technology. In this paper, we give an overview of the nanoscale memory and logic technologies that enable N3XT.","PeriodicalId":6569,"journal":{"name":"2018 IEEE International Symposium on Circuits and Systems (ISCAS)","volume":"81 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on Circuits and Systems (ISCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCAS.2018.8351756","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
As two-dimensional scaling of Si CMOS crosses the nanometer threshold, from 7 nm, 5 nm, 3 nm, toward 1 nm technology nodes, will it continue to provide the energy efficiency required of future computing systems? A scalable, fast, and energy-efficient computation platform that may provide another 1,000× in computing energy efficiency (energy-execution time product) will have massive on-chip memory co-located with highly energy-efficient computing logic, enabled by 3D integration (e.g., monolithic) with ultra-dense and fine-grained connectivity. There will be multiple layers of memories interleaved with computing logic, sensors, and application-specific devices. We call this technology platform N3XT, Nano-engineered Computing Systems Technology. In this paper, we give an overview of the nanoscale memory and logic technologies that enable N3XT.