Studies on the structural, morphological and optoelectrical properties of spray deposited CdS:Pb thin films

M. Anbarasi, V.S. Nagarethinam, R. Baskaran, V. Narasimman
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引用次数: 27

Abstract

Undoped and Pb-doped CdS (CdS:Pb) thin films were prepared on glass substrates by a spray technique using a perfume atomizer. The effects of Pb doping on the structural, morphological and optoelectrical properties of CdS thin films were studied. All of the films are polycrystalline in nature exhibiting hexagonal crystal structure. Crystallite size estimated from the Scherrer formula increased from 18.42 nm to 34.76 nm with increases in Pb doping concentration. The expansion of lattice parameters experienced with Pb doping might be due to the larger ionic radius of Pb2+ ions compared to that of the host Cd2+ ions. Increased optical transparency is observed for the doped films and the optical band gap experienced band bowing with increase in Pb doping concentration. Electrical resistivity values of the films were found to be on the order of 101 Ω cm. From the obtained results, it is observed that the CdS thin film coated with 6 wt.% Pb doping concentration exhibit better structural, morphological, optical and electrical properties.

喷镀cd:Pb薄膜的结构、形貌及光电性能研究
采用香水喷雾器喷雾技术在玻璃衬底上制备了未掺杂和掺杂铅的CdS薄膜。研究了铅掺杂对CdS薄膜结构、形貌及光电性能的影响。所有薄膜本质上都是多晶的,具有六方晶体结构。根据Scherrer公式估计,随着Pb掺杂浓度的增加,晶体尺寸从18.42 nm增加到34.76 nm。铅掺杂后晶格参数的扩展可能是由于Pb2+离子的离子半径比宿主Cd2+离子的离子半径大。随着铅掺杂浓度的增加,薄膜的光学透明度增加,光学带隙出现带弯曲。薄膜的电阻率值约为101 Ω cm。结果表明,掺杂浓度为6 wt.% Pb的CdS薄膜具有较好的结构、形貌、光学和电学性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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