Yen-Teng Ho, Y. Chu, Lin‐Lung Wei, T. Luong, Chih-Chien Lin, Chun-Hung Cheng, Hung-Ru Hsu, Y. Tu, E. Chang
{"title":"Wafer size MOS2 with few monolayer synthesized by H2S sulfurization","authors":"Yen-Teng Ho, Y. Chu, Lin‐Lung Wei, T. Luong, Chih-Chien Lin, Chun-Hung Cheng, Hung-Ru Hsu, Y. Tu, E. Chang","doi":"10.1109/CSTIC.2017.7919883","DOIUrl":null,"url":null,"abstract":"Wafer sized, high quality continuous films would be a key demand for MoS<inf>2</inf> implemented in circuit application. In this study, the growth of few monolayer Mo<inf>S2</inf> on 4 inches SiO<inf>2</inf>/Si substrate were demonstrated. The MoS<inf>2</inf> thin films were synthesized by sulfurized in a furnace from the ultra-thin MoO<inf>3</inf> starting materials by using H<inf>2</inf>S. The obtained MoS<inf>2</inf> thin film examined by Raman analysis and Photoluminescence (PL), shows the semiconductor nature with direct transition peaks of 1.86 eV and 1.99 eV. The 4∼5 monolayer of MoS<inf>2</inf> with thickness around 2.6 nm is confirmed by cross-sectional view of transmission electron microscopy (TEM). Additionally, the DC characteristics of MoS<inf>2</inf> MOSFETs exhibit at least 2 order in on/off current ratio, demonstrating the feasibility for circuit application.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"65 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2017.7919883","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Wafer sized, high quality continuous films would be a key demand for MoS2 implemented in circuit application. In this study, the growth of few monolayer MoS2 on 4 inches SiO2/Si substrate were demonstrated. The MoS2 thin films were synthesized by sulfurized in a furnace from the ultra-thin MoO3 starting materials by using H2S. The obtained MoS2 thin film examined by Raman analysis and Photoluminescence (PL), shows the semiconductor nature with direct transition peaks of 1.86 eV and 1.99 eV. The 4∼5 monolayer of MoS2 with thickness around 2.6 nm is confirmed by cross-sectional view of transmission electron microscopy (TEM). Additionally, the DC characteristics of MoS2 MOSFETs exhibit at least 2 order in on/off current ratio, demonstrating the feasibility for circuit application.
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