Aging- and Variation-Aware Delay Monitoring Using Representative Critical Path Selection

F. Firouzi, Fangming Ye, K. Chakrabarty, M. Tahoori
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引用次数: 28

Abstract

Process together with runtime variations in temperature and voltage, as well as transistor aging, degrade path delay and may eventually induce circuit failure due to timing variations. Therefore, in-field tracking of path delays is essential, and to respond to this need, several delay sensor designs have been proposed in the literature. However, due to the significant overhead of these sensors and the large number of critical paths in today's IC, it is infeasible to monitor the delay of every critical path in silicon. We present an aging- and variationaware representative path selection technique based on machine learning that allows to measure the delay of a small set of paths and infer the delay of a larger pool of paths that are likely to fail due to delay variations. Simulation results for benchmark circuits highlight the accuracy of the proposed approach for predicting critical-path delay based on the selected representative paths.
基于代表性关键路径选择的老化和变化感知延迟监测
过程与运行时温度和电压的变化以及晶体管老化一起,降低了路径延迟,并可能最终由于时序变化导致电路故障。因此,现场跟踪路径延迟是必不可少的,为了满足这一需求,文献中提出了几种延迟传感器设计。然而,由于这些传感器的巨大开销和当今IC中大量的关键路径,在硅中监控每个关键路径的延迟是不可行的。我们提出了一种基于机器学习的老化和变化感知的代表性路径选择技术,该技术允许测量一小组路径的延迟,并推断可能由于延迟变化而失败的更大路径池的延迟。基准电路的仿真结果表明,基于所选的代表性路径预测关键路径延迟的方法是准确的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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