Resonant pressure sensor with through-glass electrical interconnect based on SOI wafer technology

Abstract

This paper presents a resonant pressure sensor based on SOI wafer technology. In this device, pressure under measurement causes a deflection of a pressure-sensitive silicon square diaphragm, which is further translated to stress build up in “H” type doubly-clamped micro resonant beams, leading to resonant frequency shift. In device fabrication, through-glass vias and silicon-to-glass anodic bonding technologies were utilized. A high-strength hermetic sealing was then achieved after anodic bonding, with the resonators working in vacuum. Experimental results recorded a device resolution of 10pa, with the nonlinearity of 0.03% when pressure varying from 10kPa to 100kPa.