High-sensitivity AlGaN/GaN magnetoresistive sensor device by profiling the AlGaN layer

Abstract

By profiling the AlGaN layer, the sensitivity of the AlGaN/GaN high-electron-mobility magnetoresistive sensor device can be much enhanced. The previous work on fin-shaped magnetoresistive devices had demonstrated the effect on transitioning the AlGaN profile. In this study, the design is based on a staircase-shaped profile for the sensor, which leads to a unique 2DEG distribution in the transition region. Such a design yields a more stable and higher sensitivity in the measurement of magnetic field in micro-Tesla level.