N. Alias, Md. Rajibul Islam, Abdul Hafidz Haji Omar
{"title":"Modeling and simulation of nanoscale temperature behavior for multilayer full chip system","authors":"N. Alias, Md. Rajibul Islam, Abdul Hafidz Haji Omar","doi":"10.1063/1.3586971","DOIUrl":null,"url":null,"abstract":"Thermal effects become gradually more significant as devices get smaller on-chip. Modeling and simulations indicate that chip temperatures will increase exponentially beyond acceptable values, prompting researchers to investigate thermal effects. Research and technology development at the atomic, molecular or macromolecular levels, in the length scale of approximately 1 – 100 nanometer range, to provide a fundamental understanding of phenomena and semiconductor devices at the nanoscale and to create and use structures, devices and systems that have novel properties and functions because of their small and/or intermediate size (US NSET, 2000).","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.3586971","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Thermal effects become gradually more significant as devices get smaller on-chip. Modeling and simulations indicate that chip temperatures will increase exponentially beyond acceptable values, prompting researchers to investigate thermal effects. Research and technology development at the atomic, molecular or macromolecular levels, in the length scale of approximately 1 – 100 nanometer range, to provide a fundamental understanding of phenomena and semiconductor devices at the nanoscale and to create and use structures, devices and systems that have novel properties and functions because of their small and/or intermediate size (US NSET, 2000).