Requirements for very high temperature Kohn–Sham DFT simulations and how to bypass them

A. Blanchet, M. Torrent, J. Clérouin
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引用次数: 19

Abstract

In density functional high temperature simulations (from tens of eV to keV) the total number of Kohn-Sham orbitals is a critical quantity to get sound results. The occupation of the highest orbital in energy is here derived from the properties of the homogeneous electron gas, which gives a prescription on the total number of orbitals to reach a given level of occupation. Very low levels of occupation (10-5 to 10-6) must be considered to get convergence with Kohn-Sham orbitals, making high temperature simulations unreachable beyond a few tens of eV. After testing these predictions against ABINIT oftware package results, we test the implementation of the Extended method of Zhang et al. [PoP 23 042707, 2016] in the ABINIT package to adress very high temperatures by bypassing these strong orbital constraint.
非常高温Kohn-Sham DFT模拟的要求以及如何绕过它们
在密度泛函高温模拟(从几十eV到keV)中,Kohn-Sham轨道的总数是获得良好结果的关键数量。能量最高轨道的占位是由均相电子气体的性质推导出来的,它给出了达到给定占位水平的轨道总数的公式。必须考虑非常低的占位水平(10-5到10-6)才能与Kohn-Sham轨道收敛,这使得超过几十eV的高温模拟无法实现。在针对ABINIT软件包结果测试了这些预测之后,我们测试了Zhang等人[PoP 23 042707, 2016]在ABINIT软件包中的扩展方法的实现,通过绕过这些强轨道约束来解决非常高的温度问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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