{"title":"Sensitivity of germanium content on growth conditions of silicon-germanium nanoparticles prepared in nonthermal capacitively-coupled plasmas","authors":"Md. Seraj Uddin, C. Vijayan, J. Rath","doi":"10.1051/epjap/2020190302","DOIUrl":null,"url":null,"abstract":"We report on the synthesis of Si1−x Ge x alloy nanocrystals by very-high-frequency plasma-enhanced chemical vapor deposition (VHF PECVD) technique at different silane to germane gas flow ratio (R) in a mixture of (H2 +Ar) dilution gas and H2 dilution gas alone. TEM, SAED, EDS studies and HAADF-STEM mapping of the samples were done to investigate the NCs' size, crystallinity and distribution of Si and Ge in the Si1−x Ge x alloy NCs. The average estimated size of the NCs in all the samples are in the order of exciton Bohr radius of Ge (24.3 nm), thereby indicating the probability of good quantum confinement. The alloy nature of NCs was confirmed in Raman study. The content of Ge in SiGe NCs was evaluated from Raman spectra which show a direct correlation with the fraction of hydrogen flow in the dilution gas mixture.","PeriodicalId":12228,"journal":{"name":"European Physical Journal-applied Physics","volume":"20 1","pages":"20801"},"PeriodicalIF":0.9000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"European Physical Journal-applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1051/epjap/2020190302","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 1
Abstract
We report on the synthesis of Si1−x Ge x alloy nanocrystals by very-high-frequency plasma-enhanced chemical vapor deposition (VHF PECVD) technique at different silane to germane gas flow ratio (R) in a mixture of (H2 +Ar) dilution gas and H2 dilution gas alone. TEM, SAED, EDS studies and HAADF-STEM mapping of the samples were done to investigate the NCs' size, crystallinity and distribution of Si and Ge in the Si1−x Ge x alloy NCs. The average estimated size of the NCs in all the samples are in the order of exciton Bohr radius of Ge (24.3 nm), thereby indicating the probability of good quantum confinement. The alloy nature of NCs was confirmed in Raman study. The content of Ge in SiGe NCs was evaluated from Raman spectra which show a direct correlation with the fraction of hydrogen flow in the dilution gas mixture.
本文报道了在不同硅烷/锗气体流量比(R)下,在(H2 +Ar)稀释气体和单独的H2稀释气体中,采用甚高频等离子体增强化学气相沉积(VHF PECVD)技术合成Si1−x Ge x合金纳米晶体。通过对样品的TEM、SAED、EDS和HAADF-STEM图谱分析,研究了Si1−x Ge x合金NCs中Si和Ge的尺寸、结晶度和分布。所有样品中NCs的平均估计尺寸都在激子玻尔半径为Ge (24.3 nm)的数量级,从而表明了良好量子约束的可能性。拉曼实验证实了纳米碳化物的合金性质。用拉曼光谱测定了锗纳米碳化物中Ge的含量,结果表明,锗纳米碳化物中Ge的含量与稀释气体中氢气流动的比例直接相关。
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