Surface Passivation Using Silicon Oxide by Atmospheric Pressure Plasma Coating System

J. Ge, A. Khanna, T. Mueller
{"title":"Surface Passivation Using Silicon Oxide by Atmospheric Pressure Plasma Coating System","authors":"J. Ge, A. Khanna, T. Mueller","doi":"10.1109/PVSC.2018.8547998","DOIUrl":null,"url":null,"abstract":"In this work, we explore the feasibility to deposit silicon oxide passivating thin films using a fully atmospheric pressure plasma coater to replace vacuum based processes such as plasma-enhanced chemical vapor deposition (PECVD). It is demonstrated that by using suitable precursors and plasma settings, the deposited film thickness can be accurately controlled for application in high-efficiency solar cell structures. The deposited film is confirmed to be SiO2 close to its stoichiometric structure. By depositing the film onto industrial n-type Czochralski (Cz) Si wafers, effective lifetimes of up to 500 µs are achieved which demonstrates the potential of the atmospheric pressure plasma-deposited passivation film.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"19 1","pages":"2129-2131"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2018.8547998","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

In this work, we explore the feasibility to deposit silicon oxide passivating thin films using a fully atmospheric pressure plasma coater to replace vacuum based processes such as plasma-enhanced chemical vapor deposition (PECVD). It is demonstrated that by using suitable precursors and plasma settings, the deposited film thickness can be accurately controlled for application in high-efficiency solar cell structures. The deposited film is confirmed to be SiO2 close to its stoichiometric structure. By depositing the film onto industrial n-type Czochralski (Cz) Si wafers, effective lifetimes of up to 500 µs are achieved which demonstrates the potential of the atmospheric pressure plasma-deposited passivation film.
常压等离子体涂层氧化硅表面钝化
在这项工作中,我们探索了使用全常压等离子体涂层机沉积氧化硅钝化薄膜的可行性,以取代基于真空的工艺,如等离子体增强化学气相沉积(PECVD)。结果表明,通过适当的前驱体和等离子体设置,可以精确地控制沉积膜的厚度,从而应用于高效太阳能电池结构。结果表明,沉积膜为SiO2,符合其化学计量结构。通过将薄膜沉积在工业n型Cz硅片上,可以实现高达500µs的有效寿命,这表明了常压等离子沉积钝化膜的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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