Hysteresis-Free Negative Capacitance Effect in Metal-Ferroelectric-Insulator-Metal Capacitors with Dielectric Leakage and Interfacial Trapped Charges

Chia-Sheng Hsu, Sou-Chi Chang, Dmitri E. Nikonov, I. Young, A. Naeemi
{"title":"Hysteresis-Free Negative Capacitance Effect in Metal-Ferroelectric-Insulator-Metal Capacitors with Dielectric Leakage and Interfacial Trapped Charges","authors":"Chia-Sheng Hsu, Sou-Chi Chang, Dmitri E. Nikonov, I. Young, A. Naeemi","doi":"10.1103/PHYSREVAPPLIED.15.034048","DOIUrl":null,"url":null,"abstract":"The negative capacitance (NC) stabilization of a ferroelectric (FE) material can potentially provide an alternative way to further reduce the power consumption in ultra-scaled devices and thus has been of great interest in technology and science in the past decade. In this article, we present a physical picture for a better understanding of the hysteresis-free charge boost effect observed experimentally in metal-ferroelectric-insulator-metal (MFIM) capacitors. By introducing the dielectric (DE) leakage and interfacial trapped charges, our simulations of the hysteresis loops are in a strong agreement with the experimental measurements, suggesting the existence of an interfacial oxide layer at the FE-metal interface in metal-ferroelectric-metal (MFM) capacitors. Based on the pulse switching measurements, we find that the charge enhancement and hysteresis are dominated by the FE domain viscosity and DE leakage, respectively. Our simulation results show that the underlying mechanisms for the observed hysteresis-free charge enhancement in MFIM may be physically different from the alleged NC stabilization and capacitance matching. Moreover, the link between Merz's law and the phenomenological kinetic coefficient is discussed, and the possible cause of the residual charges observed after pulse switching is explained by the trapped charge dynamics at the FE-DE interface. The physical interpretation presented in this work can provide important insights into the NC effect in MFIM capacitors and future studies of low-power logic devices.","PeriodicalId":8423,"journal":{"name":"arXiv: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2020-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv: Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1103/PHYSREVAPPLIED.15.034048","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

The negative capacitance (NC) stabilization of a ferroelectric (FE) material can potentially provide an alternative way to further reduce the power consumption in ultra-scaled devices and thus has been of great interest in technology and science in the past decade. In this article, we present a physical picture for a better understanding of the hysteresis-free charge boost effect observed experimentally in metal-ferroelectric-insulator-metal (MFIM) capacitors. By introducing the dielectric (DE) leakage and interfacial trapped charges, our simulations of the hysteresis loops are in a strong agreement with the experimental measurements, suggesting the existence of an interfacial oxide layer at the FE-metal interface in metal-ferroelectric-metal (MFM) capacitors. Based on the pulse switching measurements, we find that the charge enhancement and hysteresis are dominated by the FE domain viscosity and DE leakage, respectively. Our simulation results show that the underlying mechanisms for the observed hysteresis-free charge enhancement in MFIM may be physically different from the alleged NC stabilization and capacitance matching. Moreover, the link between Merz's law and the phenomenological kinetic coefficient is discussed, and the possible cause of the residual charges observed after pulse switching is explained by the trapped charge dynamics at the FE-DE interface. The physical interpretation presented in this work can provide important insights into the NC effect in MFIM capacitors and future studies of low-power logic devices.
具有介电泄漏和界面俘获电荷的金属-铁电-绝缘体-金属电容器的无迟滞负电容效应
铁电(FE)材料的负电容(NC)稳定化可以为进一步降低超大尺寸器件的功耗提供一种潜在的替代方法,因此在过去的十年中一直是技术和科学的极大兴趣。在本文中,为了更好地理解在金属-铁电-绝缘体-金属(MFIM)电容器中实验观察到的无迟滞电荷升压效应,我们给出了一个物理图。通过引入介电(DE)泄漏和界面捕获电荷,我们的滞回回路模拟与实验测量结果非常吻合,表明在金属-铁电-金属(MFM)电容器的fe -金属界面存在界面氧化层。基于脉冲开关测量,我们发现电荷增强和滞后分别受FE域粘度和DE泄漏的影响。我们的模拟结果表明,MFIM中观察到的无迟滞电荷增强的潜在机制可能与所谓的NC稳定和电容匹配在物理上不同。讨论了默兹定律与现象动力学系数之间的联系,并从FE-DE界面的俘获电荷动力学解释了脉冲开关后残余电荷产生的可能原因。在这项工作中提出的物理解释可以为MFIM电容器中的NC效应和低功耗逻辑器件的未来研究提供重要的见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信