G. K. Chandrashekara, Srinivasa Reddy, Praveen C Ramamurthy
{"title":"Effect of Fluorination on the D-A-D type Hole Transporting Materials for Perovskite Solar Cells","authors":"G. K. Chandrashekara, Srinivasa Reddy, Praveen C Ramamurthy","doi":"10.1109/icee44586.2018.8937938","DOIUrl":null,"url":null,"abstract":"To study the effect of fluorination on hole transporting materials (BTD-Th and BTD-F-Th) for the efficient perovskite solar cells, we designed and synthesized a novel D-A-D type hole transporting molecule having benzo[1,2-c][1,2,5]thiadiazole (BTD) as electron acceptor unit and thiophene (Th) as a simple electron donor unit. The D-A-D molecules BTD-Th and BTD-F-Th were synthesized by palladium(0) catalyzed Stille coupling reaction. The electrochemical band gap of synthesized compounds varies from -1.5 eV to -1.7 eV, Which were ideal for hole transport material (with perovskite active layer) and effective electron blocking layer. The architecture of the perovskite device is glass/ITO/SnO2/CH3NH3PbI3(Perovskite)/Hole Transport Material/Ag.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"36 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icee44586.2018.8937938","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
To study the effect of fluorination on hole transporting materials (BTD-Th and BTD-F-Th) for the efficient perovskite solar cells, we designed and synthesized a novel D-A-D type hole transporting molecule having benzo[1,2-c][1,2,5]thiadiazole (BTD) as electron acceptor unit and thiophene (Th) as a simple electron donor unit. The D-A-D molecules BTD-Th and BTD-F-Th were synthesized by palladium(0) catalyzed Stille coupling reaction. The electrochemical band gap of synthesized compounds varies from -1.5 eV to -1.7 eV, Which were ideal for hole transport material (with perovskite active layer) and effective electron blocking layer. The architecture of the perovskite device is glass/ITO/SnO2/CH3NH3PbI3(Perovskite)/Hole Transport Material/Ag.
为了研究氟化对高效钙钛矿太阳能电池空穴输运材料(BTD-Th和BTD- f -Th)的影响,我们设计并合成了以苯并[1,2-c][1,2,5]噻二唑(BTD)为电子受体单元,噻吩(Th)为简单电子给体单元的新型D-A-D型空穴输运分子。采用钯(0)催化Stille偶联反应合成了D-A-D分子BTD-Th和BTD-F-Th。合成的化合物的电化学带隙在-1.5 eV ~ -1.7 eV之间,是理想的空穴传输材料(含钙钛矿活性层)和有效的电子阻挡层。钙钛矿器件的结构为玻璃/ITO/SnO2/CH3NH3PbI3(钙钛矿)/空穴传输材料/Ag。