Dzyaloshinskii-Moriya Interactions of Skyrmions for Memory and Logic Devices

Mosiori, Cliff Orori
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Abstract

A skyrmion is considered to be a swirling quasi-particle that can exhibit nano-size disturbances similar to those by a knot of twisting magnetic field lines. The "tangles" observed in the magnetic field lines usually generate very strong localized magnetic fields. Thus, a stable skyrmion represent the smallest realizable ideal element with a magnetic texture while an antiskyrmion is considered to be a localized magnetic particle that represents a non-trivial magnetization texture with a specified magnitude with opposite topological charge to that of a skyrmion. The demand for novel memory and logic devices has grown in recent days with the advancement of communication and information technology. Particular attention has been drawn to the use of skyrmions and antiskyrmions in memory access and storage. The findings in most recent laboratory observation at room temperature further encourage more studies mainly covering transport and dynamic properties of both skyrmions and antiskyrmions. So far, some investigations have pointed on skyrmions for reservoir computing applications which in most applications require very large memory storages and fast access capabilities. To attain this scientific dream, a very careful ferromagnetic material re-engineering on the possibility of annihilating a skyrmion by an antiskyrmion (pairwise) to develop new concepts that may be useful for memory and logic applications. It is only recently that material physicists proposed skyrmions for ultra-dense magnetic memories though it has not been implemented. In this paper, we present the model, simulation and discuss the findings obtained by simulating a magnetic skyrmion model. These magnetic skyrmions were stabilized by Dzyaloshinskii-Moriya interaction. They were analyzed as tiny whirls of magnetic configurations that exhibit memory or logic element characteristics depending on complexity of their logical element geometry. The findings suggested that a magnetic skyrmion with antiskyrmion has a capacity to act as memory element. As a result, adopting them for memory applications can simplify the fabrication process of logic elements if their magnetic spin textures are taken into account. These findings form a promising pointer for future application of skyrmion and antiskyrmion for memory, logic and reservoir computing applications.
Dzyaloshinskii-Moriya存储器和逻辑器件Skyrmions的相互作用
斯基米子被认为是一种旋转的准粒子,它可以表现出纳米级的扰动,类似于扭曲磁场线的结。在磁力线中观察到的“缠结”通常会产生很强的局部磁场。因此,稳定斯基米子代表具有磁性织构的最小可实现的理想元素,而反斯基米子被认为是一个局域磁粒子,它代表具有特定大小的非平凡磁化织构,具有与斯基米子相反的拓扑电荷。近年来,随着通信和信息技术的进步,对新型存储器和逻辑器件的需求不断增长。特别注意的是在内存访问和存储中使用skyrmions和antiskyrmions。最近在室温下的实验室观察结果进一步鼓励了更多的研究,主要包括skyrmicons和anti skyrmicons的输运和动力学性质。到目前为止,一些研究已经指向了存储库计算应用的skyrmions,在大多数应用中,这些应用需要非常大的内存存储和快速访问能力。为了实现这一科学梦想,一种非常谨慎的铁磁材料重新设计了反斯基米子湮灭斯基米子(成对)的可能性,以开发可能对记忆和逻辑应用有用的新概念。直到最近,材料物理学家才提出了超高密度磁存储器的skyrmions,尽管尚未实现。在本文中,我们给出了模型,仿真和讨论了通过模拟磁skyrmion模型得到的结果。这些磁性粒子被Dzyaloshinskii-Moriya相互作用稳定。它们被分析为磁结构的微小漩涡,根据其逻辑元素几何的复杂性表现出记忆或逻辑元素特征。研究结果表明,带有反斯基米子的磁性斯基米子具有作为记忆元素的能力。因此,如果考虑到它们的磁自旋织构,将它们用于存储应用可以简化逻辑元件的制造过程。这些发现为skyrmion和antiskyrmion在存储、逻辑和油藏计算中的未来应用提供了一个有希望的指针。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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